Impact of Cu TSVs on BEOL metal and dielectric reliability

Author

Yunlong Li ; Croes, Kristof ; Nabiollahi, N. ; Van Huylenbroeck, Stefaan ; Gonzalez, M. ; Velenis, Dimitrios ; Bender, Hugo ; Jourdain, Anne ; Pantouvaki, M. ; Stucchi, Michele ; Vanstreels, K. ; Van De Peer, Myriam ; De Messemaeker, J. ; Chen Wu ; Beyer,

Author_Institution

Imec, Leuven, Belgium

fYear

2014

fDate

1-5 June 2014

Abstract

Cu pumping of through silicon vias (TSV) may result in deformations of the Cu/low-k interconnect wiring above the TSVs and affect the back-end-of-line (BEOL) metal and dielectric reliability. We investigate the impact of Cu TSVs on the BEOL reliability, including stress induced voiding (SIV) of Cu vias on top of the TSV and the dielectric reliability of both inter- and intralevel low-k materials in Cu damascene interconnects. Possible solutions to mitigate the reliability risks are also discussed.

Keywords

copper; integrated circuit interconnections; integrated circuit reliability; low-k dielectric thin films; three-dimensional integrated circuits; BEOL reliability; Cu; Cu damascene interconnects; Cu pumping; Cu vias; Cu-low-k interconnect wiring; SIV; TSV; back-end-of-line metal reliability; dielectric reliability; interlevel low-k materials; intralevel low-k materials; reliability risks; stress induced voiding; through silicon vias; Capacitors; Metals; Reliability; Silicon; Stress; Through-silicon vias; BEOL reliability; stress induced voiding (SIV); through silicon vias (TSV); time dependent dielectric breakdown (TDDB);

fLanguage

English

Publisher

ieee

Conference_Titel

Reliability Physics Symposium, 2014 IEEE International

Conference_Location

Waikoloa, HI

Type

conf

DOI

10.1109/IRPS.2014.6860630

Filename

6860630