Measuring propagation delays of critical paths using time-resolved LADA

Author

Erington, K. ; Bodoh, D. ; Serrels, K.A. ; Nemirow, C. ; Leslie, N. ; Lundquist, T.R. ; Vedagarbha, P. ; Farrell, C. ; Reid, Derryck T.

Author_Institution

Freescale Semicond. Inc., Austin, TX, USA

fYear

2014

fDate

1-5 June 2014

Abstract

Laser-assisted device alteration is an established technique used to identify critical speed paths in integrated circuits. By using a synchronized pulsed laser, logic transition waveforms have been acquired that can be used to measure propagation delays of the critical path signals. A method for determining the polarity of the transitions is presented for LADA sites on bulk 28nm CMOS technology. The time-resolved LADA logic waveforms are compared to, and are in close agreement with, laser voltage probe waveforms acquired from the same device.

Keywords

CMOS integrated circuits; bulk CMOS technology; critical path signals; critical speed paths; integrated circuits; laser-assisted device alteration; logic transition waveforms; propagation delays; size 28 nm; synchronized pulsed laser; time-resolved LADA; Laser transitions; Measurement by laser beam; Semiconductor lasers; Synchronization; Transistors; Design Debug; Failure Analysis; Laser-Assisted Device Alteration (LADA); Logic Transition Waveforms;

fLanguage

English

Publisher

ieee

Conference_Titel

Reliability Physics Symposium, 2014 IEEE International

Conference_Location

Waikoloa, HI

Type

conf

DOI

10.1109/IRPS.2014.6860638

Filename

6860638