Modeling of transient and static components of intrinsic emission from VLSI circuits

This work presents a study of the effect of electrical parameters, such as signal frequency and switching activity, on the intensity of transient and static emission components in time-integrated emission images acquired from VLSI circuits. Time-integrated and time-resolved emission data were acquired from a 32 nm SOI test chip at different operating conditions to weight and separate the transient and static components of circuit spontaneous emission. A novel model to explain the experimental data is also proposed.