• DocumentCode
    186757
  • Title

    Energy driven modeling of OFF-state and sub-threshold degradation in scaled NMOS transistors

  • Author

    Varghese, Dany ; Nandakumar, M. ; Tang, Song ; Reddy, Veerababu ; Krishnan, Sridhar

  • Author_Institution
    Analog Technol. Dev., Texas Instrum. Inc., Dallas, TX, USA
  • fYear
    2014
  • fDate
    1-5 June 2014
  • Abstract
    We study OFF-state and sub-threshold degradation in scaled NMOS transistors and propose a unified channel current (IS) and drain-to-source voltage (VDS) dependent lifetime model for a wide range of bias conditions. The lifetime dependence on VDS suggests that degradation is limited by the maximum energy available for the channel electron in short channel transistors.
  • Keywords
    MOSFET; OFF-state; bias conditions; channel electron; drain-to-source voltage dependent lifetime model; energy driven modeling; scaled NMOS transistors; short channel transistors; subthreshold degradation; unified channel current; Degradation; Hot carriers; Logic gates; MOSFET; Mathematical model; Stress; OFF-state drain stress; energy-driven hot carrier model; gate dielectric breakdown; lateral scaling; sub-threshold degradation; universal degradation;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Reliability Physics Symposium, 2014 IEEE International
  • Conference_Location
    Waikoloa, HI
  • Type

    conf

  • DOI
    10.1109/IRPS.2014.6860640
  • Filename
    6860640
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=186757