Title :
Energy driven modeling of OFF-state and sub-threshold degradation in scaled NMOS transistors
Author :
Varghese, Dany ; Nandakumar, M. ; Tang, Song ; Reddy, Veerababu ; Krishnan, Sridhar
Author_Institution :
Analog Technol. Dev., Texas Instrum. Inc., Dallas, TX, USA
Abstract :
We study OFF-state and sub-threshold degradation in scaled NMOS transistors and propose a unified channel current (IS) and drain-to-source voltage (VDS) dependent lifetime model for a wide range of bias conditions. The lifetime dependence on VDS suggests that degradation is limited by the maximum energy available for the channel electron in short channel transistors.
Keywords :
MOSFET; OFF-state; bias conditions; channel electron; drain-to-source voltage dependent lifetime model; energy driven modeling; scaled NMOS transistors; short channel transistors; subthreshold degradation; unified channel current; Degradation; Hot carriers; Logic gates; MOSFET; Mathematical model; Stress; OFF-state drain stress; energy-driven hot carrier model; gate dielectric breakdown; lateral scaling; sub-threshold degradation; universal degradation;
Conference_Titel :
Reliability Physics Symposium, 2014 IEEE International
Conference_Location :
Waikoloa, HI
DOI :
10.1109/IRPS.2014.6860640
