Title :
Remote plasma-enhanced atomic layer deposition (RPEALD) nitride/oxide gate dielectric for sub-65 nm low standby power CMOS application
Author :
Chi-Chun Chen ; Lee, T.-L. ; Lee, D.-Y. ; Chang, V.S. ; Lin, H.-C. ; Chen, S.-C. ; Huang, T.-Y. ; Liang, M.-S.
Author_Institution :
Adv. Module Technol. Div., Taiwan Semicond. Manuf. Co., Hsin-Chu, Taiwan
Abstract :
A novel remote plasma-enhanced atomic layer deposition (RPEALD) silicon nitride technology is developed in a production-worthy tool for nitride/oxide (N/O) stack gate dielectric. Ultrathin N/O stack (EOT/spl sim/13 /spl Aring/) is realized with 50X gate leakage current reduction over thermal oxides. In addition to drastic gate current reduction, devices with RPEALD N/O stack and plasma-nitrided base oxide also exhibit well-behaved device performance and superior reliability characteristics (Qbd, TDDB, NBTI), very promising for sub-65 nm low power CMOS applications.
Keywords :
CMOS integrated circuits; atomic layer deposition; dielectric materials; nanotechnology; plasma materials processing; power semiconductor devices; silicon compounds; 65 nm; CMOS application; SiN; SiO/sub 2/; gate leakage current reduction; negative bias temperature instability; nitride/oxide gate dielectrics; reliability; remote plasma enhanced atomic layer deposition; silicon nitride technology; stack gate dielectric; thermal oxides; time dependent dielectric breakdown; ultrathin N/O stack; Atomic layer deposition; CMOS technology; Design for quality; Dielectrics; Leakage current; Niobium compounds; Plasma applications; Plasma devices; Plasma properties; Silicon;
Conference_Titel :
VLSI Technology, 2003. Digest of Technical Papers. 2003 Symposium on
Conference_Location :
Kyoto, Japan
Print_ISBN :
4-89114-033-X
DOI :
10.1109/VLSIT.2003.1221125
