Impact of oxygen-enriched SiN interface on Al/sub 2/O/sub 3/ gate stack. An innovative solution to low-power CMOS

Author

Saito, S. ; Shimamoto, Y. ; Tsujikawa, S. ; Hamamura, H. ; Tonomura, O. ; Hisamoto, D. ; Mine, T. ; Torii, Kentaro ; Yugami, J. ; Hiratani, M. ; Onai, T. ; Kimura, Shunji

Author_Institution

Central Res. Lab., Hitachi Ltd., Tokyo, Japan

fYear

2003

fDate

10-12 June 2003

Firstpage

145

Lastpage

146

Abstract

A SiN dielectric with oxygen-enriched interface (OI-SiN) was applied as an interfacial layer of an Al/sub 2/O/sub 3/ stack. The OI-SiN interface, where the nitrogen profile is controlled and the fixed charge is suppressed, can solve critical issues for high-/spl kappa/ dielectrics; impurity penetration through conventional processes, and reduced mobility due to Coulomb scattering. Thus, the drivability with low-leakage current is ensured. We show a scaling strategy to integrate the OI-SiN/Al/sub 2/O/sub 3/ stack which is suitable for low-power applications.

Keywords

CMOS integrated circuits; MISFET; alumina; dielectric materials; impurity distribution; leakage currents; silicon compounds; Coulomb scattering; SiN dielectric material; SiN interface; SiN-Al/sub 2/O/sub 3/; SiN/Al/sub 2/O/sub 3/ stack; conventional process; impurity penetration; leakage current; low power CMOS; nitrogen profile; oxygen enriched interface; suppression effect; Annealing; CMOS process; Capacitance-voltage characteristics; Dielectric substrates; High-K gate dielectrics; Impurities; Laboratories; Nitrogen; Scattering; Silicon compounds;

fLanguage

English

Publisher

ieee

Conference_Titel

VLSI Technology, 2003. Digest of Technical Papers. 2003 Symposium on

Conference_Location

Kyoto, Japan

Print_ISBN

4-89114-033-X

Type

conf

DOI

10.1109/VLSIT.2003.1221127

Filename

1221127