DocumentCode
1868129
Title
Highly manufacturable and reliable 32 Mb FRAM technology with novel BC and capacitor cleaning process
Author
Song, Y.J. ; Joo, H.J. ; Jang, N.W. ; Kim, H.H. ; Park, J.H. ; Kang, H.Y. ; Lee, S.Y. ; Kinam Kim
Author_Institution
R&D Center, Samsung Electron. Co. Ltd., Kyungki, South Korea
fYear
2003
fDate
10-12 June 2003
Firstpage
169
Lastpage
170
Abstract
In this paper, the 32Mb FRAM were fabricated by enhancing the sensing window using several novel integration technologies such as highly oriented PZT films, seam-free BC technology and special capacitor cleaning technology.
Keywords
ferroelectric capacitors; ferroelectric materials; ferroelectric storage; ferroelectric thin films; lead compounds; random-access storage; reliability; surface cleaning; 32 MB; 32 Mbit; FRAM; PZT; PbZrO3TiO3; capacitor cleaning process; highly oriented PZT films; sensing window; Capacitors; Cleaning; Etching; Ferroelectric films; Ferroelectric materials; Manufacturing processes; Nonvolatile memory; Plasma applications; Polymers; Random access memory;
fLanguage
English
Publisher
ieee
Conference_Titel
VLSI Technology, 2003. Digest of Technical Papers. 2003 Symposium on
Conference_Location
Kyoto, Japan
Print_ISBN
4-89114-033-X
Type
conf
DOI
10.1109/VLSIT.2003.1221139
Filename
1221139
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