Title :
In situ biasing TEM investigation of resistive switching events in TiO2-based RRAM
Author :
Jonghan Kwon ; Picard, Yoosuf N. ; Skowronski, Marek ; Sharma, Abhishek A. ; Bain, James A.
Author_Institution :
Dept. of Mater. Sci. & Eng., Carnegie Mellon Univ., Pittsburgh, PA, USA
Abstract :
We report the first demonstration of in situ electrical biasing and resistive switching of TiO2-based RRAM while observing oxygen vacancy migration under the TEM. Specifically, repeated extension and retraction of Wadsley defects due to the migration of oxygen vacancies was observed to be concurrent with the SET and RESET processes (respectively) in the hysteretic I-V behavior of single-crystal TiO2 devices. Additionally, structural evolution within a 20 nm size grain was observed during SET processes in ALD-grown TiO2 devices using STEM HAADF imaging.
Keywords :
random-access storage; scanning-transmission electron microscopy; titanium compounds; vacancies (crystal); ALD; RESET processes; RRAM; SET processes; STEM HAADF imaging; TiO2; Wadsley defects; hysteretic I-V behavior; in situ biasing TEM; in situ electrical biasing; oxygen vacancy migration; resistive switching events; single-crystal devices; size 20 nm; structural evolution; Crystals; Electrodes; Imaging; Probes; Switches; Thin film devices; Tin; Magnéli phase; RRAM; Wadsley defects; in-situ biasing TEM; oxygen vacancy migration;
Conference_Titel :
Reliability Physics Symposium, 2014 IEEE International
Conference_Location :
Waikoloa, HI
DOI :
10.1109/IRPS.2014.6860680
