DocumentCode
1868628
Title
Photorefraction in CdTe:Ge enhanced by auxiliary illumination
Author
Odoulov, S. ; Shcherbin, K. ; Briat, B. ; Ramaz, F.
Author_Institution
Inst. of Phys., Acad. of Sci., Kiev, Ukraine
fYear
1999
fDate
28-28 May 1999
Firstpage
277
Abstract
Summary form only given. CdTe:Ge ensures the largest two-beam coupling gain factor among all photorefractive semiconductors with no electric field. At the same time a large scatter of data is observed even for the samples cut from the same ingot and the ultimate values of the diffraction efficiency and gain factor are still smaller than the predicted by the theory.
Keywords
II-VI semiconductors; cadmium compounds; germanium; infrared spectra; multiwave mixing; photorefractive materials; CdTe:Ge; CdTe:Ge photorefractive materials; auxiliary illumination; diffraction efficiency; electric field; gain factor; photorefractive semiconductors; two-beam coupling gain factor; CD recording; Charge carrier processes; Electron traps; Electronic mail; Frequency modulation; Gratings; Intensity modulation; Lighting; Photorefractive effect; Physics;
fLanguage
English
Publisher
ieee
Conference_Titel
Lasers and Electro-Optics, 1999. CLEO '99. Summaries of Papers Presented at the Conference on
Conference_Location
Baltimore, MD, USA
Print_ISBN
1-55752-595-1
Type
conf
DOI
10.1109/CLEO.1999.834186
Filename
834186
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