Title :
Study on transparent amorphous indium oxide thin film transistors technology
Author :
Chih-Hsiang Chang ; Yu-Chia Lai ; Yang-Shun Fan ; Che-Chia Chang ; Po-Tsun Liu
Author_Institution :
Dept. of Photonics, Nat. Chiao Tung Univ., Hsinchu, Taiwan
fDate :
June 29 2015-July 2 2015
Abstract :
In this study, we analyzed the In2O3 thin films with different oxygen flow rate during sputtering as the transistor´s channel layer. The electrical analysis including device´s reliability and material analysis were both examined.
Keywords :
amorphous semiconductors; indium compounds; semiconductor device reliability; sputtering; thin film transistors; In2O3; oxygen flow rate; sputtering; transistor channel layer; transparent amorphous thin film transistor technology; Charge carrier processes; Fluid flow; Indium; Logic gates; Stress; Thin film transistors; Threshold voltage;
Conference_Titel :
Physical and Failure Analysis of Integrated Circuits (IPFA), 2015 IEEE 22nd International Symposium on the
Conference_Location :
Hsinchu
DOI :
10.1109/IPFA.2015.7224410
