Title :
An Au-free GaN high electron mobility transistor with Ti/Al/W Ohmic metal structure
Author :
Jing-Neng Yao ; Yueh-Chin Lin ; Yu-Lin Chuang ; Yu-Xiang Huang ; Wang-Cheng Shih ; Sze, Simon M. ; Chang, Edward Yi
Author_Institution :
Dept. of Electron. Eng., Nat. Chiao-Tung Univ., Hsinchu, Taiwan
fDate :
June 29 2015-July 2 2015
Abstract :
We demonstrate the Au-free GaN HEMT device with the Ti/Al/W Ohmic metal structure. Excellent surface roughness 4.88nm for Ti/Al/W Ohmic stucture was achieved after metallization. The DC characteristics is comparable with conventional HEMTs and the stress performance with high voltage is better than conventional HEMTs.
Keywords :
III-V semiconductors; aluminium; gallium compounds; high electron mobility transistors; metallisation; ohmic contacts; semiconductor device models; surface roughness; titanium; tungsten; wide band gap semiconductors; Au-free GaN HEMT device; DC characteristics; GaN; Ti-Al-W; metallization; ohmic metal structure; size 4.88 nm; stress performance; surface roughness; Gallium nitride; Gold; HEMTs; Logic gates; Nickel; Ohmic contacts; Stress;
Conference_Titel :
Physical and Failure Analysis of Integrated Circuits (IPFA), 2015 IEEE 22nd International Symposium on the
Conference_Location :
Hsinchu
DOI :
10.1109/IPFA.2015.7224415
