DocumentCode
1869412
Title
Factors affecting hysteresis in the transfer curves of a-IGZO TFTs under illumination and raised temperature
Author
Yi-Jung Chen ; Ya-Hsiang Tai
Author_Institution
Dept. of Photonics, Nat. Chiao Tung Univ., Hsinchu, Taiwan
fYear
2015
fDate
June 29 2015-July 2 2015
Firstpage
374
Lastpage
377
Abstract
For different environments of illumination and temperature, we investigate the hysteresis in the transfer characteristic of a-IGZO TFT by controlling the sweep speed of the gate voltage. The hysteresis can be affected by the response time for the transition of oxygen vacancies states to the ionized states and its amount.
Keywords
II-VI semiconductors; amorphous semiconductors; gallium compounds; hysteresis; indium compounds; semiconductor device testing; thermal analysis; thin film transistors; wide band gap semiconductors; zinc compounds; InGaZnO; a-IGZO TFT; gate voltage; indium gallium zinc oxide; ionized states; oxygen vacancies states; sweep speed; thin-film transistor; transfer curves; Hysteresis; Lighting; Logic gates; Temperature measurement; Thin film transistors; Time factors; Voltage measurement;
fLanguage
English
Publisher
ieee
Conference_Titel
Physical and Failure Analysis of Integrated Circuits (IPFA), 2015 IEEE 22nd International Symposium on the
Conference_Location
Hsinchu
Type
conf
DOI
10.1109/IPFA.2015.7224419
Filename
7224419
Link To Document