Title :
Study of reliability physics on high-k/metal gate and power devices
Author_Institution :
Center for Innovative Integrated Electron. Syst., Tohoku Univ., Sendai, Japan
fDate :
June 29 2015-July 2 2015
Abstract :
This paper focuses attention on MOS interface phenomena. Key issues on Hf-based high-k/metal gate CMOS technology by gate first process for low operational power applications are overviewed. One of the issues is how to control the oxygen vacancy distribution in the high-k/metal gate system, which is requisite for important work-function tuning with EOT scaling. Quantitative understanding of the potential distribution in this system is crucial for obtaining the appropriate Vth in advanced CMOS devices under a low supply voltage operation. In the meantime, breakdown phenomenon and its mechanism of SiC MOS capacitors are studied. Characteristic electric breakdown traces with carpet-bombing-like concaves are observed for Al/SiO2/SiC MOS capacitors. From TD(Z)DB measurements, the breakdown mechanism is explained and the conduction behaviour during the breakdown can be inferable by elaborating the measurement setup.
Keywords :
CMOS integrated circuits; MOS capacitors; aluminium; electric breakdown; hafnium; integrated circuit measurement; integrated circuit reliability; integrated circuit testing; power integrated circuits; silicon compounds; wide band gap semiconductors; Al-SiO2-SiC; CMOS devices; CMOS technology; EOT scaling; Hf; MOS capacitors; MOS interface phenomena; TD(Z)DB measurements; breakdown mechanism; breakdown phenomenon; carpet-bombing-like concaves; electric breakdown; equivalent gate oxide thickness; high-k-metal gate system; low operational power applications; oxygen vacancy distribution; power devices; reliability physics; Electric breakdown; High K dielectric materials; Logic gates; MOS capacitors; Metals; Silicon; Silicon carbide;
Conference_Titel :
Physical and Failure Analysis of Integrated Circuits (IPFA), 2015 IEEE 22nd International Symposium on the
Conference_Location :
Hsinchu
DOI :
10.1109/IPFA.2015.7224438