Title :
High hole mobility GeOI pMOSFETs with high-k / metal gate on Ge condensation wafers
Author :
Clavelier, L. ; Damlencourt, J.F. ; Le Royer, C. ; Vincent, B. ; Morand, Y. ; Campidelli, Y. ; Hartmann, J.-M. ; Martinez, E. ; Nguyen, Q.T. ; Cristoloveanu, S. ; Deleonibus, S. ; Bensahel, D.
Author_Institution :
CEA LETI, Grenoble
Abstract :
In this paper, we report for the first time electrical performances of high hole mobility pMOSFETs with high-k/metal gate using ultra-thin GeOI wafers as templates obtained by the Ge condensation technique. It is concluded that the results coupled with a localized Ge condensation technique, open the way to planar SOI-nMOSFET/GeOI-pMOSFET co-integration.
Keywords :
MOSFET; germanium; hole mobility; silicon-on-insulator; Ge; SOI-GeOI co-integration; Si-SiO2; germanium condensation technique; high hole mobility GeOI pMOSFET; high-k/metal gate; ultra-thin germanium-on-insulator wafers; Annealing; Channel bank filters; Germanium silicon alloys; High K dielectric materials; High-K gate dielectrics; MOSFETs; Silicon germanium; Silicon on insulator technology; Substrates; Tin;
Conference_Titel :
SOI Conference, 2007 IEEE International
Conference_Location :
Indian Wells, CA
Print_ISBN :
978-1-4244-0879-5
Electronic_ISBN :
1078-621X
DOI :
10.1109/SOI.2007.4357832
