• DocumentCode
    1872107
  • Title

    RF Power NLDMOS Technology Transfer Strategy from the 130nm to the 65nm node on thin SOI

  • Author

    Bon, O. ; Gonnard, O. ; Boissonnet, L. ; Dieudonné, F. ; Haendler, S. ; Raynaud, C. ; Morancho, F.

  • fYear
    2007
  • fDate
    1-4 Oct. 2007
  • Firstpage
    61
  • Lastpage
    62
  • Abstract
    Thin film SOI is a key technology for wireless and RF applications. We demonstrate the successful transfer of a DriftMOS transistor from the 130 nm technology to the 65 nm one on thin SOI. The process option introduced in this node enables to achieve high device performance: due to the new well patterning strategy, the main transistor figure of merit is improved.
  • Keywords
    nanoelectronics; power integrated circuits; radiofrequency integrated circuits; semiconductor device breakdown; silicon-on-insulator; technology transfer; DriftMOS transistor; RF power NLDMOS technology transfer strategy; off-state breakdown terms; patterning strategy; self-heating effect; size 65 nm; thermal dissipation; thin film SOI; transistor figure of merit; Breakdown voltage; CMOS technology; Doping profiles; Electric breakdown; Electric resistance; Immune system; Lithography; Radio frequency; Substrates; Technology transfer;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    SOI Conference, 2007 IEEE International
  • Conference_Location
    Indian Wells, CA
  • ISSN
    1078-621X
  • Print_ISBN
    978-1-4244-0879-5
  • Electronic_ISBN
    1078-621X
  • Type

    conf

  • DOI
    10.1109/SOI.2007.4357852
  • Filename
    4357852
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1872107