Author :
Pelella, Mario M. ; Chan, Darin ; Kruegel, Stephan ; Frohberg, Kai ; Rivers, Jason ; Heller, Thomas ; Richter, Ralf ; Rodriguez, Norma ; Klein, Rich ; Zhou, J.R. ; Eppes, David ; Leary, Mike ; Hale, Stephen ; Noorlag, Date ; Bullard, Larry ; Huebler, Pete
Abstract :
A new device structure to mitigate plasma charging damage in advanced SOI technologies has been demonstrated that can be easily incorporated into modern-day, as well as future-scaled microprocessor designs. This novel structure offers improved product yields and also mitigates "walking- wounded" device characteristics that oftentimes plague the operation and speed grades of advanced microprocessors with threshold voltage shifts and increased leakage currents.
Keywords :
integrated circuit layout; integrated circuit yield; plasma materials processing; silicon-on-insulator; SOI technologies; leakage currents; lightning rods; microprocessors; plasma charging damage; plasma damage mitigation concept; threshold voltage shifts; walking- wounded device characteristics; Capacitors; Circuits; Diodes; Electrons; Etching; Lightning; Microprocessors; Plasma applications; Plasma density; Plasma materials processing;
