Excitation of intersubband transitions by THz pulses

Author

Kersting, R. ; Bratschitsch, Rudolf ; Thaller, E. ; Strasser, G. ; Unterrainer, K. ; Heyman, J.N.

Author_Institution

Inst. for Solid State Electron., Tech. Univ. of Vienna, Vienna, Austria

fYear

1999

fDate

28-28 May 1999

Firstpage

462

Lastpage

463

Abstract

Summary form only given. When intersubband transitions are excited in semiconductor heterostructures, the charge carriers follow the driving field in an oscillatory motion. THz time-domain spectroscopy is an attractive tool to study the polarization following an exciting THz pulse. A time resolution which is shorter than the oscillation time of the driving field enables the observation of the coherent electron motion for the first time. The investigated GaAs/AlGaAs heterostructures are modulation doped parabolic quantum wells.

Keywords

III-V semiconductors; aluminium compounds; gallium arsenide; infrared spectra; optical modulation; semiconductor heterojunctions; semiconductor quantum wells; time resolved spectra; GaAs-AlGaAs; GaAs/AlGaAs heterostructures; THz pulses; THz time-domain spectroscopy; charge carriers; coherent electron motion; driving field; exciting THz pulse; intersubband transitions; modulation doped parabolic quantum wells; oscillation time; oscillatory motion; parabolic quantum wells; polarization; semiconductor heterostructures; time resolution; Electric fields; Frequency; Josephson junctions; Microscopy; Physics; Resonance; Semiconductor materials; Semiconductor superlattices; Spectroscopy; Tunneling;

fLanguage

English

Publisher

ieee

Conference_Titel

Lasers and Electro-Optics, 1999. CLEO '99. Summaries of Papers Presented at the Conference on

Conference_Location

Baltimore, MD, USA

Print_ISBN

1-55752-595-1

Type

conf

DOI

10.1109/CLEO.1999.834449

Filename

834449