Emission statistics for Si and HfC/Si emitter arrays after gas exposure

Author

Nicolaescu, D. ; Nagao, M. ; Sato, T. ; Filip, V. ; Kanemaru, S. ; Itoh, J.

Author_Institution

Nanoelectronics Res. Inst., Agency of Ind. Sci. & Technol., Ibaraki, Japan

fYear

2004

fDate

11-16 July 2004

Firstpage

140

Lastpage

141

Abstract

Test arrays of gated Si emitters with N_tips=100 tips have been fabricated. A HfC coating layer was deposited on the tips, showing effectiveness in lowering the operational voltage and improving the uniformity of the array emission. The Si and Si/HfC emitter arrays were measured in high vacuum conditions and after being subject to Ar and O₂ residual gases with partial pressures in the range 10^-4 to 10^-6 Pa, the evolution in time of the emission properties being recorded. The influence of residual gases on the field emission (FE) properties has been comparatively characterized through model parameter extraction.

Keywords

coatings; elemental semiconductors; field emission; field emitter arrays; hafnium compounds; silicon; FE; Si-HfC; array emission uniformity; coating layer; emission property time evolution; emission statistics; emitter arrays; field emission; gas exposure; gated emitter test array fabrication; high vacuum condition; model parameter extraction; operational voltage; partial pressure; residual gases; Argon; Coatings; Gases; Hybrid fiber coaxial cables; Iron; Parameter extraction; Statistics; Testing; Time measurement; Voltage;

fLanguage

English

Publisher

ieee

Conference_Titel

Vacuum Nanoelectronics Conference, 2004. IVNC 2004. Technical Digest of the 17th International

Print_ISBN

0-7803-8397-4

Type

conf

DOI

10.1109/IVNC.2004.1354939

Filename

1354939