DocumentCode :
1875617
Title :
Damping in 1 GHz laterally-vibrating composite piezoelectric resonators
Author :
Segovia-Fernandez, Jeronimo ; Piazza, Gianluca
Author_Institution :
Carnegie Mellon Univ., Pittsburgh, PA, USA
fYear :
2015
fDate :
18-22 Jan. 2015
Firstpage :
1000
Lastpage :
1003
Abstract :
This paper focuses on experimentally verifying the physics of damping in 1 GHz laterally-vibrating composite piezoelectric resonators. This work confutes a previously developed theory of interfacial dissipation, a slip phenomenon occurring at the interface between dissimilar materials, which associated damping to a stress jump (or difference in Young´s moduli (ΔE)) of the materials forming the interface. This work finds that damping in 1 GHz laterally-vibrating AlN resonators could be attributed to either interfacial dissipation due to an acoustic velocity jump (Δv) or thermoelastic dissipation (TED) in the electrodes.
Keywords :
aluminium compounds; crystal resonators; electrodes; AlN; Young´s moduli; acoustic velocity jump; electrodes; frequency 1 GHz; interfacial dissipation; laterally-vibrating composite piezoelectric resonators; stress jump; thermoelastic dissipation; Acoustics; Damping; Electrodes; III-V semiconductor materials; Metals; Micromechanical devices; Resonant frequency;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Micro Electro Mechanical Systems (MEMS), 2015 28th IEEE International Conference on
Conference_Location :
Estoril
Type :
conf
DOI :
10.1109/MEMSYS.2015.7051130
Filename :
7051130
Link To Document :
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