• DocumentCode
    1875699
  • Title

    Back-End-Of-Line Poly-Sige Disk Resonators

  • Author

    Quévy, Emmanuel P. ; Paulo, Alvaro San ; Basol, Erol ; Howe, Roger T. ; King, Tsu-Jae ; Bokor, Jeffrey

  • Author_Institution
    Berkeley Sensor and Actuator Center, EECS Dept., University of California
  • fYear
    2006
  • fDate
    2006
  • Firstpage
    234
  • Lastpage
    237
  • Abstract
    This paper reports the characterization of poly-silicon-germanium disk resonators at frequencies ranging from 35 to 425MHz. The back-end-of-line process technology is based on Spacer definition of sub-100nm lateral gaps, and uses Aluminum as interconnect material for compatibility with advanced CMOS backend. Reported data are organized around transmission, temperature and stability characteristics, as well as scanning-AFM imaging of the radial vibration modes.
  • Keywords
    Aluminum; CMOS technology; Electrodes; Frequency; Germanium silicon alloys; Micromechanical devices; Scanning electron microscopy; Silicon germanium; Space technology; Tin;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Micro Electro Mechanical Systems, 2006. MEMS 2006 Istanbul. 19th IEEE International Conference on
  • Conference_Location
    Istanbul, Turkey
  • ISSN
    1084-6999
  • Print_ISBN
    0-7803-9475-5
  • Type

    conf

  • DOI
    10.1109/MEMSYS.2006.1627779
  • Filename
    1627779
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1875699