Selective growth of carbon nanotubes on silicon protrusions

Author

Sato, Hideki ; Hata, Koichi ; Miyake, Hideto ; Hiramatsu, Kazumasa ; Saito, Yahachi

Author_Institution

Dept. of Electr. & Electron. Eng., Mie Univ., Tsu, Japan

fYear

2004

fDate

11-16 July 2004

Firstpage

210

Lastpage

211

Abstract

A novel and simple process for fabrication of a carbon nanotube field emitter array is reported. Chemical vapor deposition (plasma enhanced CVD and thermal CVD) and lift-off process were used for selective growth of CNTs on the vertexes of the protrusions. The field emission measurements of the CNTs arrays were performed by taking current-voltage curves in an ultrahigh vacuum condition. It was found that the CNTs array grown by the TCVD with the Ti buffer layer gave the best FE characteristics.

Keywords

carbon nanotubes; field emitter arrays; plasma CVD; C; carbon nanotube field emitter array; carbon nanotubes selective growth; chemical vapor deposition; current-voltage curves; field emission measurements; lift-off process; plasma enhanced CVD; silicon protrusions; thermal CVD; ultrahigh vacuum condition; Buffer layers; Carbon nanotubes; Chemical vapor deposition; Current measurement; Fabrication; Field emitter arrays; Performance evaluation; Plasma chemistry; Plasma measurements; Silicon;

fLanguage

English

Publisher

ieee

Conference_Titel

Vacuum Nanoelectronics Conference, 2004. IVNC 2004. Technical Digest of the 17th International

Print_ISBN

0-7803-8397-4

Type

conf

DOI

10.1109/IVNC.2004.1354977

Filename

1354977