DocumentCode :
1875817
Title :
Efficient 50-Gb/s silicon microring modulator based on forward-biased pin diodes
Author :
Baba, Toshihiko ; Akiyama, Soramichi ; Imai, Masayoshi ; Hirayama, Naoki ; Takahashi, Hiroki ; Noguchi, Y. ; Horikawa, Tsuyoshi ; Usuki, Tatsuya
Author_Institution :
Photonics Electron. Technol. Res. Assoc. (PETRA, Tsukuba, Japan
fYear :
2013
fDate :
28-30 Aug. 2013
Firstpage :
69
Lastpage :
70
Abstract :
We developed a pin-diode silicon microring modulator that used side-wall grating waveguides. Modulator exhibits 0.28- V·cm-VπL at 25 GHz in forward-biased operation mode. We achieved 50-Gb/s operation at a driving voltage of 1.96 volts-peak-to-peak (Vpp).
Keywords :
diffraction gratings; elemental semiconductors; integrated optics; integrated optoelectronics; micro-optics; optical modulation; optical waveguides; p-i-n diodes; silicon; Si; bit rate 50 Gbit/s; forward-biased pin diodes; frequency 25 GHz; side-wall grating waveguides; silicon microring modulator; Gratings; Optical ring resonators; Phase modulation; Phase shifters; Photonics; Silicon;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Group IV Photonics (GFP), 2013 IEEE 10th International Conference on
Conference_Location :
Seoul
ISSN :
1949-2081
Print_ISBN :
978-1-4673-5803-3
Type :
conf
DOI :
10.1109/Group4.2013.6644430
Filename :
6644430
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=1875817
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