• DocumentCode
    187612
  • Title

    The impact of high Vth drifts tail and real workloads on SRAM reliability

  • Author

    Angot, D. ; Huard, Vincent ; Quoirin, M. ; Federspiel, Xavier ; Haendler, S. ; Saliva, M. ; Bravaix, A.

  • Author_Institution
    STMicroelectron., Crolles, France
  • fYear
    2014
  • fDate
    1-5 June 2014
  • Abstract
    Based on experimental measurements at bitcell level combined with SPICE and Monte-Carlo simulations, an analytical method is presented to accurately predict fresh/aged Vmin distributions. The impact of BTI variability modeling and real workloads considerations is also deeply analyzed in this paper.
  • Keywords
    Monte Carlo methods; SPICE; SRAM chips; integrated circuit modelling; integrated circuit reliability; BTI variability modeling; Monte Carlo simulation; SPICE simulation; SRAM reliability; bitcell level; high threshold voltage drift tail; Aging; Degradation; Mathematical model; Random access memory; SPICE; Standards; Stress; Bias Temperature Instability (BTI); Static Random Access Memory (SRAM); reliability; variability; workloads;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Reliability Physics Symposium, 2014 IEEE International
  • Conference_Location
    Waikoloa, HI
  • Type

    conf

  • DOI
    10.1109/IRPS.2014.6861126
  • Filename
    6861126
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=187612