Title :
Improvement of diamond nanocomposite field emitters by oxidation
Author :
Karabutov, A.V. ; Gordeev, S.K. ; Ralchenko, V.G. ; Korchagina, S.B. ; Dementjev, A.P. ; Chakhovskoi, A.G.
Author_Institution :
Gen. Phys. Inst., Moscow, Russia
Abstract :
Improvement of diamond nanocomposite field emitters by oxidation is studied. Results show that the oxidized composites exhibit lower emission threshold fields Eth=1-2 V/μm as measured with a flat screen technique. The emission uniformity (the number of emission sites per unite area) was also improved. The composites with low sp2-bonded carbon content, i.e. more porous samples, show better results. The structure of the nanocomposites was studied using microRaman spectroscopy, SEM, and Auger electron spectroscopy. Electronic properties of the emission centers (work function, electrical conductivity, topography and emission intensity) were investigated with a special STM device. The possible mechanisms of the emission improvement by oxidation in this two-phase carbon system are also discussed.
Keywords :
Auger electron spectra; Raman spectra; diamond; electrical conductivity; field emission; field emitter arrays; nanocomposites; nanoporous materials; oxidation; scanning electron microscopy; scanning tunnelling microscopy; surface topography; work function; Auger Electron Spectroscopy; C; SEM; STM device; diamond nanocomposite field emitters; electrical conductivity; electronic properties; emission centers; emission intensity; emission sites; emission threshold fields; emission uniformity; flat screen technique; microRaman spectroscopy; oxidation; porous samples; sp2-bonded carbon content; topography; work function; Carbon dioxide; Diamond-like carbon; Electron emission; Electron guns; Oxidation; Physics; Spectroscopy; Surface topography; Surface treatment; Transistors;
Conference_Titel :
Vacuum Nanoelectronics Conference, 2004. IVNC 2004. Technical Digest of the 17th International
Print_ISBN :
0-7803-8397-4
DOI :
10.1109/IVNC.2004.1355004