Title :
Impact of body bias on soft error tolerance of bulk and Silicon on Thin BOX structure in 65-nm process
Author :
Kuiyuan Zhang ; Manzawa, Y. ; Kobayashi, Kaoru
Author_Institution :
Kyoto Inst. of Technol., Kyoto, Japan
Abstract :
We analyze the soft error tolerance of DFF in 65-nm bulk and SOTB (Silicon on Thin BOX) process by alpha and neutron experiments and device-simulations. The experimental results reveal that by increasing the reverse body bias the soft error rate in the bulk structure is increased, while the number of soft errors in SOTB structure is decreased. The results from device-simulation show that the collected charge of bulk structure is increased, while the collected charge is decreased in SOTB as the reverse body bias increases.
Keywords :
MOSFET; elemental semiconductors; neutron effects; proton effects; radiation hardening (electronics); semiconductor device models; silicon; 3D NMOS device model; DFF; SOTB structure; Si; alpha experiments; bulk on thin box structure; buried oxide; device-simulations; neutron experiments; reverse body bias impact; silicon on thin box process; single event upset; size 65 nm; soft error tolerance analysis; Error analysis; Integrated circuit modeling; Latches; MOS devices; Neutrons; Radiation effects; Silicon;
Conference_Titel :
Reliability Physics Symposium, 2014 IEEE International
Conference_Location :
Waikoloa, HI
DOI :
10.1109/IRPS.2014.6861174
