0.25 mu m gate inverted HEMTs for an ultra-high speed DCFL dynamic frequency divider

Author

Saito, T. ; Fujishiro, H.I. ; Ichioka, T. ; Tanaka, K. ; Nishi, S. ; Sano, Y.

Author_Institution

Oki Electr. Ind. Co. Ltd., Tokyo, Japan

fYear

1989

fDate

22-25 Oct. 1989

Firstpage

117

Lastpage

120

Abstract

A 0.25- mu m-gate inverted HEMT (I-HEMT) was fabricated using a conventional recess gate process. The recess etching was performed by RIBE (reactive-ion-beam etching). A minimum propagation delay time of 10 ps/gate at a power dissipation of 43.3 mW was measured for a directly coupled FET logic (DCFL) ring oscillator. A novel 1/8 dynamic frequency divider was fabricated using the 0.25- mu m-gate I-HEMTs. The maximum operating frequency for the dynamic divider was 26.5 GHz at a power dissipation of 0.573 W. The frequency is the upper limit of the measurement system used. This is the best result ever reported for DCFL circuits.<>

Keywords

III-V semiconductors; counting circuits; etching; field effect integrated circuits; frequency dividers; gallium arsenide; high electron mobility transistors; oscillators; semiconductor technology; 0.25 micron; 0.573 W; 10 ps; 26.5 GHz; 43.3 mW; GaAs; I-HEMT; RIBE; conventional recess gate process; directly coupled FET logic; dynamic frequency divider; inverted HEMTs; operating frequency; power dissipation; propagation delay time; reactive-ion-beam etching; recess etching; ring oscillator; semiconductors; ultra-high speed DCFL; Etching; FETs; Frequency conversion; HEMTs; Logic; MODFETs; Power dissipation; Power measurement; Propagation delay; Time measurement;

fLanguage

English

Publisher

ieee

Conference_Titel

Gallium Arsenide Integrated Circuit (GaAs IC) Symposium, 1989. Technical Digest 1989., 11th Annual

Conference_Location

San Diego, CA, USA

Type

conf

DOI

10.1109/GAAS.1989.69307

Filename

69307