Kinetic Monte Carlo simulations for dopant diffusion and defects in Si and SiGe: Analysis of dopants in SiGe-channel Quantum Well

Author

Noda, Toshio ; Witters, L. ; Mitard, J. ; Rosseel, Erik ; Hellings, Geert ; Vrancken, C. ; Eyben, P. ; Bender, Hugo ; Thean, A. ; Horiguchi, Naoto ; Vandervorst, W.

Author_Institution

Panasonic Corp., Uozu, Japan

fYear

2013

fDate

6-7 June 2013

Firstpage

78

Lastpage

83

Abstract

Atomistic Kinetic Monte Carlo (KMC) diffusion modeling is used for dopant diffusion and defect analysis in ultra shallow junction formation in Si and SiGe. An analysis of dopant diffusion and defects in SiGe-channel Quantum Well (QW) using an atomistic KMC approach are shown. Thin SiGe layer with high Ge content for SiGe-channel QW has an impact on implantation damage and Boron-Transient Enhanced Diffusion (TED) suppression, and defect evolution. KMC shows that As-pocket in SiGe-channel pFET shows enhanced diffusion toward SiGe-channel and higher As concentration in SiGe-channel. The difference of pocket diffusion is one of possible reason for the higher Vth mismatch for SiGe-channel with As pocket than for Si-channel. To avoid implant damage influence, Implant-Free SiGe channel-QW with B-doped SiGe epi for extension-S/D formation is used. KMC simulation and SSRM shows that B migration from B-doped SiGe raised-S/D to SiGe-channel can form S/D-extension overlap.

Keywords

Ge-Si alloys; Monte Carlo methods; arsenic; diffusion; doping profiles; elemental semiconductors; semiconductor quantum wells; semiconductor thin films; silicon; KMC simulation; Si-SiGe:As; SiGe-channel quantum well; boron-transient enhanced diffusion suppression; defect analysis; dopant diffusion; implantation damage; kinetic Monte Carlo diffusion simulations; thin layer; ultra shallow junction formation; Annealing; Atomic layer deposition; Implants; Junctions; Semiconductor process modeling; Silicon; Silicon germanium;

fLanguage

English

Publisher

ieee

Conference_Titel

Junction Technology (IWJT), 2013 13th International Workshop on

Conference_Location

Kyoto

Print_ISBN

978-1-4799-0578-2

Type

conf

DOI

10.1109/IWJT.2013.6644510

Filename

6644510