DocumentCode
1878286
Title
Progress and prospects of silicon transistors based on junction technologies
Author
Wakabayashi, H.
Author_Institution
Tokyo Inst. of Technol., Yokohama, Japan
fYear
2013
fDate
6-7 June 2013
Firstpage
98
Lastpage
103
Abstract
Progress of silicon transistors will be described on junction technologies. Especially, advanced CMOS device and more than Moore technologies will be discussed for various applications.
Keywords
CMOS integrated circuits; MOSFET; elemental semiconductors; silicon; CMOS device; Moore technologies; Si; junction technologies; silicon transistors; CMOS integrated circuits; Field effect transistors; Junctions; Logic gates; Silicon; Very large scale integration; Advanced CMOS device; Communication device; Display device; Image sensor; Junction technologies; More-than-Moore device; Non-volatile memory; Packaging technology; Scaling; Silicon Transistor;
fLanguage
English
Publisher
ieee
Conference_Titel
Junction Technology (IWJT), 2013 13th International Workshop on
Conference_Location
Kyoto
Print_ISBN
978-1-4799-0578-2
Type
conf
DOI
10.1109/IWJT.2013.6644515
Filename
6644515
Link To Document