Title :
Enhanced large signal laser modeling including thermal effects for analog communications
Author :
Ghoniemy, S. ; MacEachern, L. ; Mahmoud, S.
Author_Institution :
Carleton Univ., Ottawa, Ont., Canada
Abstract :
Enhanced normalized laser rate equations suitable for large signal analyses and system level simulations are discussed. A large signal laser model including thermal effects and incorporating a modified laser gain formulation is presented. Symbolically defined devices (SDDs) implemented in the Hewlett Packard Advanced Design System (HP-ADS) are constructed using the proposed laser model. The effects of temperature on the transient response characteristics of 1.3 μm InGaAsP/InP Fabry-Perot lasers are predicted using the SDD implementation.
Keywords :
III-V semiconductors; gallium arsenide; gallium compounds; indium compounds; laser theory; laser transitions; optical transmitters; semiconductor device models; semiconductor lasers; thermo-optical effects; 1.3 micron; Hewlett Packard Advanced Design System; InGaAsP-InP; InGaAsP/InP Fabry-Perot lasers; analog communications; large signal analyses; large signal laser modeling; laser model; modified laser gain formulation; normalized laser rate equations; symbolically defined devices; system level simulations; thermal effects; transient response characteristics; Charge carrier density; Indium phosphide; Laser modes; Laser noise; Nonlinear equations; Predictive models; Semiconductor lasers; Temperature dependence; Temperature distribution; Transient response;
Conference_Titel :
4thLaser and Fiber-Optical Networks Modeling, 2002. Proceedings of LFNM 2002. International Workshop on
Print_ISBN :
0-7803-7372-3
DOI :
10.1109/LFNM.2002.1014090
