Title :
High-performance 1.2-μm highly strained InGaAs/GaAs quantum well lasers
Author :
Mogg, S. ; Plaine, G. ; Asplund, C. ; Sundgren, P. ; Baskar, K. ; Mulot, M. ; Schatz, R. ; Hammar, M.
Author_Institution :
Dept. of Microelectron. & Inf. Technol., R. Inst. of Technol., Kista, Sweden
Abstract :
The growth and characterisation of high-performance 1.2-μm highly strained InGaAs/GaAs single quantum well (SQW) laser diodes is reported. High output power in excess of 200 mW per facet was obtained from ridge-waveguide (RWG) lasers at an emission wavelength of 1230 nm. These lasers operate CW to at least 145°C and show a high characteristic temperature of 150 K. The net modal gain was measured using the method described by Hakki and Paoli (1975).
Keywords :
III-V semiconductors; MOCVD; gallium arsenide; indium compounds; laser transitions; optical fabrication; quantum well lasers; ridge waveguides; semiconductor growth; vapour phase epitaxial growth; waveguide lasers; 1.2 micron; 1230 nm; 145 degC; 150 K; 200 mW; CW operation; InGaAs-GaAs; VPE growth; characterisation; high characteristic temperature; high output power; high-performance SQW LDs; highly strained InGaAs/GaAs SQW; low-pressure MOVPE; net modal gain measurement; ridge-waveguide lasers; single quantum well laser diodes; Diode lasers; Epitaxial growth; Gallium arsenide; Indium gallium arsenide; Quantum dot lasers; Quantum well lasers; Semiconductor lasers; Substrates; Temperature; Vertical cavity surface emitting lasers;
Conference_Titel :
Indium Phosphide and Related Materials Conference, 2002. IPRM. 14th
Print_ISBN :
0-7803-7320-0
DOI :
10.1109/ICIPRM.2002.1014135
