DocumentCode :
1881553
Title :
Amplification in photonic crystal heterostructures with active media from doping superlattice layers
Author :
Ushakov, D.V. ; Kononenko, V.K. ; Smirnov, A.G.
Author_Institution :
Stepanov Inst. of Phys., Acad. of Sci., Minsk, Belarus
fYear :
2002
fDate :
2002
Firstpage :
159
Lastpage :
161
Abstract :
Computer simulation demonstrates that asymmetric photonic crystal heterostructures with defect layers provides lasing at two different wavelengths and in opposite output directions. The light field distribution and radiation transport in the photonic structures are strongly affected by the n-i-p-i layers periodicity, dispersion characteristics of the components, and. conditions at the interfaces. Described photonic crystal. heterostructures can be attractive for a wide variety of applications. In particular, they can be used as single-mode laser sources or amplifiers at the near-infrared spectral region
Keywords :
energy gap; laser mirrors; laser theory; microcavity lasers; photonic band gap; refractive index; semiconductor lasers; semiconductor superlattices; Bragg mirrors; asymmetric photonic crystal heterostructures; defect layers; different wavelength lasing; effective band-gap; effective refractive index; light field distribution; low threshold microlasers; mixed microcavities; n-i-p-i layers; near-infrared spectral region; one-dimensional heterostructures; optical forbidden gap; radiation transport; single-mode laser sources; superlattice layer doping; Doping; Gallium arsenide; Optical refraction; Optical superlattices; Optical variables control; Photonic band gap; Photonic crystals; Refractive index; Stimulated emission; Wavelength division multiplexing;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
4thLaser and Fiber-Optical Networks Modeling, 2002. Proceedings of LFNM 2002. International Workshop on
Conference_Location :
Kharkiv
Print_ISBN :
0-7803-7372-3
Type :
conf
DOI :
10.1109/LFNM.2002.1014150
Filename :
1014150
Link To Document :
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