Title :
Enhanced gate-controlled-diode current (EGCDC) measurement
Author :
Viswanathan, C.R. ; Hsu, Jen-Tai ; Aum, Paul ; Chan, David
Author_Institution :
Dept. of Electr. Eng., California Univ., Los Angeles, CA, USA
Abstract :
A technique for the measurement of the gate-controlled-diode-current (GCDC) in short-channel MOS transistors is described. This technique uses the internal bipolar action of the MOS transistor to amplify the GCDC, thereby extending the sensitivity of the measurement. Results of measurements on small geometry devices, as well as on larger devices, are given. A model based on parasitic bipolar transistor action is given for the enhanced gate-controlled diode current (EGCDC)
Keywords :
electric current measurement; insulated gate field effect transistors; semiconductor device testing; current measurement; enhanced gate-controlled diode current; internal bipolar action; parasitic bipolar transistor action; sensitivity; short-channel MOS transistors; small geometry devices; Area measurement; Capacitance; Current measurement; Electric variables measurement; Geometry; Leakage current; MOSFETs; Semiconductor diodes; Substrates; Voltage;
Conference_Titel :
Microelectronic Test Structures, 1993. ICMTS 1993. Proceedings of the 1993 International Conference on
Conference_Location :
Sitges
Print_ISBN :
0-7803-0857-3
DOI :
10.1109/ICMTS.1993.292895
