Title :
Evaluations of leakage currents and capacitances on elementary CMOS devices
Author :
Girard, P. ; Nouet, P. ; Khalkhal, A. ; Roche, F.M.
Author_Institution :
Lab. d´´Inf., Montpellier II Univ., France
Abstract :
A method allowing the easy determination of currents and capacitances of integrated structures in the femtoampere and femtofarad ranges, respectively, is developed. It involves some test structures and, as equipment, a standard transistor parameter analyzer. In the case of minimum size diodes for a 1.5-μm CMOS technology, experimental results show the capabilities of the method, and good consistency with simulation
Keywords :
CMOS integrated circuits; capacitance measurement; electric current measurement; integrated circuit technology; integrated circuit testing; 1.5 micron; CMOS technology; capacitances; elementary CMOS devices; femtofarad ranges; integrated structures; leakage currents; minimum size diodes; transistor parameter analyzer; CMOS technology; Capacitance measurement; Circuit testing; Current measurement; Diodes; Integrated circuit technology; Leakage current; MOSFETs; Parasitic capacitance; Zero voltage switching;
Conference_Titel :
Microelectronic Test Structures, 1993. ICMTS 1993. Proceedings of the 1993 International Conference on
Conference_Location :
Sitges
Print_ISBN :
0-7803-0857-3
DOI :
10.1109/ICMTS.1993.292905
