DocumentCode
188355
Title
Temperature dependent performance analysis of intersubband thermophotovoltaic structure
Author
Saurov, Sumit Narayan
Author_Institution
Dept. of Electr. & Electron. Eng., Bangladesh Univ. of Eng. & Technol., Dhaka, Bangladesh
fYear
2014
fDate
29-31 May 2014
Firstpage
1
Lastpage
4
Abstract
Intersubband transition based multiple junction quantum cascade thermophotovoltaic device has been proposed using AlN/GaN heterostructure. Temperature effect on the dark current has been investigated numerically to analyze its effect on the performance of thermophotovoltaic structure.
Keywords
aluminium compounds; dark conductivity; gallium compounds; thermophotovoltaic cells; AlN-GaN; dark current; intersubband thermophotovoltaic structure; multiple junction quantum cascade thermophotovoltaic device; temperature dependent performance analysis; Dark current; Energy conversion; Energy states; Gallium nitride; III-V semiconductor materials; Temperature dependence; Carrier relaxation; dark current; electromagnetic; photocurrent; photovoltaic;
fLanguage
English
Publisher
ieee
Conference_Titel
Developments in Renewable Energy Technology (ICDRET), 2014 3rd International Conference on the
Conference_Location
Dhaka
Type
conf
DOI
10.1109/ICDRET.2014.6861725
Filename
6861725
Link To Document