DocumentCode :
188357
Title :
Effect of strain on the efficiency of InGaN-based multijunction solar cell
Author :
Rahman, Md.Aminur ; Islam, Md.Rafiqul
Author_Institution :
Department of Electrical and Electronic Engineering, Khulna University of Engineering & Technology (KUET), 9203, Bangladesh
fYear :
2014
fDate :
29-31 May 2014
Firstpage :
1
Lastpage :
4
Abstract :
In this paper, the strain-dependent efficiency of multijunction solar cell (MJSC) is reported for the first time. Using multilayered strain model, the strain induced due to the change in lattice constants in different layers of MJSC is calculated. With the combination of strain and deformation potentials the strain-induced change in band gap energy of different subcells is estimated. The results obtained in our study demonstrate that the efficiency of InGaN-based MJSC is increased under the influence of strain compared to that evaluated without taking into account of strain. It is also found that the strain-dependent change in efficiency depends on the number of subcell layers and their thicknesses. The enhancement of efficiency is resulted from the increasing of open circuit voltage of the subcells under the influence of compressive strain.
Keywords :
Gallium nitride; Junctions; Lattices; Materials; Photonic band gap; Photovoltaic cells; Strain; InGaN-based MJSC; Strain; efficiency enhancement; multilayered strain model;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Developments in Renewable Energy Technology (ICDRET), 2014 3rd International Conference on the
Conference_Location :
Dhaka, Bangladesh
Type :
conf
DOI :
10.1109/ICDRET.2014.6861726
Filename :
6861726
Link To Document :
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