InP-based MOSFET technology utilizing a liquid phase oxidized InGaAs gate

Author

Kang, Shin-Jae ; Han, Jae-Chun ; Kim, Jeong-Hoon ; Jo, Seong-June ; Park, Seong-Wung ; Song, Jong-In

Author_Institution

Dept. of Inf. & Commun., K-JIST, Kwangju, South Korea

fYear

2002

fDate

2002

Firstpage

193

Lastpage

196

Abstract

We first report the characteristics of InGaAs-oxide grown by a liquid phase oxidation using a gallium-ion-contained nitric acid solution and an oxygen plasma treatment and depletion-mode In_0.53Ga_0.47As- and InP-channel MOSFETs using the InGaAs-oxide. The characteristics of InGaAs-oxide showed low leakage current and small capacitance-voltage hysteresis. 1.5×50 μm² depletion-mode In_0.53Ga_0.47Asand InP-channel MOSFETs were fabricated by using a conventional optical lithography. The gate oxide was formed by a liquid phase oxidation of InGaAs ohmic cap layer and subsequently an oxygen plasma treatment after mesa etching and ohmic metallization. The drain current-voltage characteristics of In_0.53Ga_0.47As- and InP-channel MOSFETs showed a complete pinch-off and saturation. The f_T and f_max of the In_0.53Ga_0.47As-channel MOSFET were approximately 9 GHz and 10 GHz, respectively, and those of the InP-channel MOSFET were approximately 10.5 GHz and 70 GHz, respectively.

Keywords

MOSFET; characteristics measurement; indium compounds; leakage currents; oxidation; photoresists; semiconductor device measurement; 1.5 micron; 10 GHz; 10.5 GHz; 70 GHz; 9 GHz; InP-InGaAs; MOSFET technology; capacitance-voltage hysteresis; depletion-mode MOSFETs; drain current-voltage characteristics; leakage current; liquid phase oxidized gate; mesa etching; ohmic metallization; optical lithography; oxygen plasma treatment; pinch-off; saturation; Capacitance-voltage characteristics; Hysteresis; Indium gallium arsenide; Leakage current; Lithography; MOSFET circuits; Optical saturation; Oxidation; Plasma applications; Plasma properties;

fLanguage

English

Publisher

ieee

Conference_Titel

Indium Phosphide and Related Materials Conference, 2002. IPRM. 14th

ISSN

1092-8669

Print_ISBN

0-7803-7320-0

Type

conf

DOI

10.1109/ICIPRM.2002.1014307

Filename

1014307