• DocumentCode
    1885255
  • Title

    A 53-to-68GHz 18dBm power amplifier with an 8-way combiner in standard 65nm CMOS

  • Author

    Martineau, Baudouin ; Knopik, V. ; Siligaris, Alexandre ; Gianesello, Frederic ; Belot, Didier

  • Author_Institution
    STMicroelectronics, Crolles, France
  • fYear
    2010
  • fDate
    7-11 Feb. 2010
  • Firstpage
    428
  • Lastpage
    429
  • Abstract
    A 53-to-68 GHz power amplifier with an 8-way combiner in standard 65 nm CMOS meets the wireless HDMI standard. Reliability is improved by solving the issues of time-dependent dielectric breakdown and hot-carrier-injection degradation. The PA output power is 18 dBm.
  • Keywords
    CMOS integrated circuits; power amplifiers; CMOS; combiner; complementary metal-oxide-semiconductor; frequency 53 GHz to 68 GHz; hot carrier injection degradation; power amplifier; reliability; time-dependent dielectric breakdown; wireless HDMI standard; Bandwidth; Circuits; Electrostatic discharge; Human computer interaction; Power amplifiers; Power generation; Radio frequency; Radiofrequency amplifiers; Transformers; Voltage;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Solid-State Circuits Conference Digest of Technical Papers (ISSCC), 2010 IEEE International
  • Conference_Location
    San Francisco, CA
  • ISSN
    0193-6530
  • Print_ISBN
    978-1-4244-6033-5
  • Type

    conf

  • DOI
    10.1109/ISSCC.2010.5433879
  • Filename
    5433879