95 ºC uncooled and high power 25-Gbps direct modulation of InGaAlAs ridge waveguide DFB laser

Author

Fukamachi, T. ; Shiota, T. ; Kitatani, K. ; Ban, T. ; Matsuoka, Y. ; Mita, R. ; Sugawara, T. ; Tanaka, S. ; Shinoda, K. ; Adachi, K. ; Aoki, M.

Author_Institution

Central Res. Lab., Hitachi, Ltd., Kokubunji, Japan

fYear

2009

fDate

20-24 Sept. 2009

Firstpage

1

Lastpage

2

Abstract

95^degC, 25-Gbps direct modulation of a high-power (>15 mW) 1.3-mum-InGaAIAs-DFB laser is developed for the first time. The device will be a key for 4-channel CWDM uncooled light-sources used in the lower-power-consumption 100-GbE subsystems.

Keywords

III-V semiconductors; distributed feedback lasers; gallium arsenide; gallium compounds; high-speed optical techniques; indium compounds; optical communication equipment; optical modulation; semiconductor lasers; waveguide lasers; wavelength division multiplexing; DFB laser; InGaAlAs; bit rate 25 Gbit/s; four-channel CWDM light-sources; high power direct modulation; lower-power-consumption subsystems; ridge waveguide laser; temperature 95 degC; uncooled direct modulation; uncooled light-sources; wavelength 1.3 mum; Distributed feedback devices; Laser feedback; Local area networks; Mirrors; Optical feedback; Optical losses; Power lasers; Temperature; Waveguide lasers; Wavelength division multiplexing;

fLanguage

English

Publisher

ieee

Conference_Titel

Optical Communication, 2009. ECOC '09. 35th European Conference on

Conference_Location

Vienna

Print_ISBN

978-1-4244-5096-1

Type

conf

Filename

5287181