DocumentCode :
1885495
Title :
Energetics and strain field of surface steps
Author :
Budiman, R.A.
Author_Institution :
Dept. of Mech. & Manuf. Eng., Univ. of Calgary, Alta., Canada
fYear :
2003
fDate :
20-23 July 2003
Firstpage :
270
Lastpage :
273
Abstract :
Stability and surface morphology of a thin film deposited in ultrahigh vacuum condition depend on strain energy stored in the thin film. Predicting the stability and morphology of such surfaces is essential for understanding, e.g., (i) the formation and growth of nanocrystals (quantum dots) in semiconductor heteroepitaxial thin film deposition and (ii) the requirements to grow flat thin films despite the presence of surface steps. This work describes a novel, theoretical model that gives rise to modified mechanical force equilibrium equations and provides a new framework to model step energetics and dynamics in heteroepitaxial thin films. Specializing in two-dimensional thin films, strain fields and energetics of a solitary surface step will be presented.
Keywords :
chemical potential; elasticity; internal stresses; semiconductor epitaxial layers; semiconductor quantum dots; solitons; surface morphology; surface potential; mechanical force equilibrium equations; nanocrystals; quantum dots; semiconductor heteroepitaxial thin film deposition; solitary surface; strain energy; strain field; surface morphology; theoretical model; ultrahigh vacuum; Capacitive sensors; Elementary particle vacuum; Equations; Nanocrystals; Quantum dots; Semiconductor thin films; Sputtering; Stability; Surface morphology; Transistors;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
MEMS, NANO and Smart Systems, 2003. Proceedings. International Conference on
Print_ISBN :
0-7695-1947-4
Type :
conf
DOI :
10.1109/ICMENS.2003.1222007
Filename :
1222007
Link To Document :
بازگشت