Title :
A novel asymmetric gate recess process for InP HEMTs
Author :
Robin, Franck ; Meier, Hanspeter ; Homan, O.J. ; Bachtold, Werner
Author_Institution :
Lab. for Electromagn. Fields & Microwave Electron., Swiss Fed. Inst. of Technol., Zurich, Switzerland
Abstract :
An asymmetric gate recess process has been developed for the fabrication of InP-based HEMTs with improved breakdown voltage. This process is based on a double e-beam exposure of a 4-layers stack of PMGI and PMMA resists. Vertical patterns can be fabricated that can otherwise not be achieved with standard e-beam lithography processes. A 30% improvement of the on-state breakdown voltage of 0.2 μm InP HEMTs was obtained without marked degradation of fmax.
Keywords :
III-V semiconductors; electron resists; high electron mobility transistors; indium compounds; low-power electronics; semiconductor device breakdown; semiconductor device reliability; 0.2 micron; HEMTs; InP; PMGI; PMMA; asymmetric gate recess process; double e-beam exposure; e-beam lithography processes; on-state breakdown voltage; resists; vertical patterns; Electrons; Etching; Fabrication; Gold; HEMTs; Impact ionization; Indium phosphide; MODFETs; Microwave technology; Resists;
Conference_Titel :
Indium Phosphide and Related Materials Conference, 2002. IPRM. 14th
Print_ISBN :
0-7803-7320-0
DOI :
10.1109/ICIPRM.2002.1014332
