Title :
A thermal-diffusivity-based temperature sensor with an untrimmed inaccuracy of ±0.2°c (3s) from −55°c to 125°c
Author :
van Vroonhoven, C.P.L. ; D´Aquino, D. ; Makinwa, Kofi A. A.
Author_Institution :
Delft Univ. of Technol., Delft, Netherlands
Abstract :
A temperature sensor based on the thermal diffusivity of IC-grade silicon has a near-linear digital output, which is insensitive to both process spread and packaging stress. Its accuracy is mainly limited by lithographic errors and thus benefits from scaling. An implementation in a 0.18 μm CMOS process has an untrimmed inaccuracy of ±0.2°C (3σ) from -55°C to 125°C.
Keywords :
CMOS integrated circuits; temperature sensors; thermal diffusivity; CMOS; near-linear digital output; size 0.18 μm; temperature -55°C to 125°C; thermal-diffusivity-based temperature sensor; untrimmed inaccuracy; Bandwidth; CMOS process; Filters; Impedance; Packaging; Sampling methods; Silicon; Temperature sensors; Thermal resistance; Thermal sensors;
Conference_Titel :
Solid-State Circuits Conference Digest of Technical Papers (ISSCC), 2010 IEEE International
Conference_Location :
San Francisco, CA
Print_ISBN :
978-1-4244-6033-5
DOI :
10.1109/ISSCC.2010.5433900
