DocumentCode :
1886767
Title :
A SIMS study of the deuterium distribution in SIMOX buried oxides
Author :
Campisi, G.J. ; Roitman, P. ; Simons, D. ; Krull, W.A.
Author_Institution :
US Naval Res. Lab., Washington, DC, USA
fYear :
1991
fDate :
1-3 Oct 1991
Firstpage :
16
Lastpage :
17
Abstract :
SIMS (secondary ion mass spectrometry) analysis of deuterium annealed SIMOX (separation by implanted oxygen) samples was used to investigate the interaction of hydrogen with the buried oxide. Deuterium diffused into the SIMOX buried oxide and reacted with the dangling Si bonds, the precursors to oxide traps, to form Si-D. SIMS analysis of deuterium shows that these bonds are distributed uniformly in the buried oxides of all samples examined, including as-implanted samples. Thus, oxygen vacancies and traps are contained throughout the bulk of the SIMOX buried oxides
Keywords :
annealing; dangling bonds; impurity distribution; impurity-defect interactions; ion implantation; secondary ion mass spectra; semiconductor-insulator boundaries; vacancies (crystal); SIMOX buried oxides; SIMS; Si-D; Si-SiO2; dangling Si bonds; oxide traps; vacancies; Annealing; Degradation; Deuterium; Electrons; Hydrogen; Implants; Laboratories; NIST; Silicon; Temperature;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
SOI Conference, 1991. Proceedings, 1991., IEEE International
Conference_Location :
Vail Valley, CO
Print_ISBN :
0-7803-0184-6
Type :
conf
DOI :
10.1109/SOI.1991.162834
Filename :
162834
Link To Document :
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