Terahertz quantum cascade laser based on GaSb/AlGaSb material system

Author

Hosako, Iwao ; Yasuda, Hiroaki

Author_Institution

Nat. Inst. of Inf. & Commun. Technol., Tokyo

fYear

2007

fDate

24-26 Sept. 2007

Firstpage

1

Lastpage

3

Abstract

Terahertz quantum cascade laser using a resonant longitudinal-optical phonon depopulation scheme based on GaSb/AlGaSb material system on GaAs substrate has been proposed and studied. A smaller threshold electric field is expected for GaSb/AlGaSb QCL because GaSb has smaller longitudinal-optical phonon energy than that of GaAs. Although, there exists a large lattice mismatch between GaAs and GaSb, it was successfully demonstrated that the THz-QCL structures of GaSb/AlGaSb active layers on GaAs substrate were fabricated.

Keywords

III-V semiconductors; aluminium compounds; electric fields; gallium compounds; phonons; quantum cascade lasers; submillimetre wave lasers; GaSb-AlGaSb; longitudinal-optical phonon energy; resonant longitudinal-optical phonon depopulation scheme; terahertz quantum cascade laser; threshold electric field; Conducting materials; Gallium arsenide; Gas lasers; Lattices; Optical device fabrication; Optical materials; Optical scattering; Phonons; Quantum cascade lasers; Resonance;

fLanguage

English

Publisher

ieee

Conference_Titel

Applied Electromagnetics and Communications, 2007. ICECom 2007. 19th International Conference on

Conference_Location

Dubrovnik

Print_ISBN

978-953-6037-50-6

Electronic_ISBN

978-953-6037-51-3

Type

conf

DOI

10.1109/ICECOM.2007.4544437

Filename

4544437