DocumentCode
1889124
Title
Electrically injected 1.55 μm InP-based photonic crystal microcavity coherent light source
Author
Sabarinathan, J. ; Zhou, W.-D. ; Yu, P.-C. ; Bhattacharya, P. ; Mogg, S. ; Hammar, Mattias
Author_Institution
Dept. of Electr. Eng. & Comput. Sci., Michigan Univ., Ann Arbor, MI, USA
fYear
2002
fDate
2002
Firstpage
425
Lastpage
428
Abstract
Microcavities with dimensions on the wavelength scale are being extensively investigated due to their ability to exhibit enhanced spontaneous emission, directional output and single-mode operation. Photonic crystals with single or multiple defects have emerged as the preferred way to obtain such microcavities. We have designed and fabricated a 1.55 μm electrically injected photonic crystal surface-emitting microcavity device using an InP-based heterostructure. The emission wavelength at 1.55 μm is an important wavelength for long haul optical communication applications.
Keywords
III-V semiconductors; indium compounds; laser transitions; light coherence; light sources; microcavity lasers; optical communication equipment; photonic band gap; quantum well lasers; spontaneous emission; surface emitting lasers; 1.55 micron; InGaAsP QWs; InGaAsP-InP; InP-based heterostructure; InP-based photonic crystal microcavity; directional output; electrically injected microcavity; long haul optical communication applications; microcavity coherent light source; single-mode operation; spontaneous emission; surface-emitting microcavity device; Indium phosphide; Light sources; Microcavities; Mirrors; Optical fiber communication; Optical pumping; Optical surface waves; Photonic crystals; Spontaneous emission; Stimulated emission;
fLanguage
English
Publisher
ieee
Conference_Titel
Indium Phosphide and Related Materials Conference, 2002. IPRM. 14th
ISSN
1092-8669
Print_ISBN
0-7803-7320-0
Type
conf
DOI
10.1109/ICIPRM.2002.1014458
Filename
1014458
Link To Document