Title :
Fabrication of two-dimensional InP photonic band-gap structures using inductively coupled plasma etching
Author :
Djoudi, A. ; Legouézigou, L. ; Hubert, S. ; Sainson, S. ; Moussant, C. ; Chandouineau, J.-P. ; Pommereau, F. ; Duan, G.-H.
Author_Institution :
Alcatel Optronics, Nozay, France
Abstract :
A fabrication process of two-dimensional photonic crystals has been developed. Such a process consists of electron beam lithography, reactive ion etching of an intermediate dielectric layer and the etching of InP with inductively coupled plasma. Photonic crystal patterns such as waveguide Fabry-Perot cavities have been fabricated on InP based epitaxial structures. A depth to diameter ratio as high as 14 has been obtained for hole diameter varying from 200 nm to 240 nm. Optical characterisation of these fabricated photonic crystals showed excellent results.
Keywords :
Fabry-Perot resonators; III-V semiconductors; electron beam lithography; indium compounds; integrated optics; optical fabrication; optical waveguides; photonic band gap; sputter etching; 100 to 220 nm; 2D photonic crystals; InP; InP based epitaxial structures; InP photonic band-gap structures; PBG structures; RIE; electron beam lithography; fabrication process; inductively coupled plasma; intermediate dielectric layer; optical characterisation; plasma etching; reactive ion etching; two-dimensional photonic crystals; waveguide Fabry-Perot cavities; Electron beams; Etching; Fabrication; Indium phosphide; Lithography; Optical waveguides; Photonic band gap; Photonic crystals; Plasma applications; Plasma waves;
Conference_Titel :
Indium Phosphide and Related Materials Conference, 2002. IPRM. 14th
Print_ISBN :
0-7803-7320-0
DOI :
10.1109/ICIPRM.2002.1014459
