DocumentCode
1889303
Title
Modulation of field emission current from ZnO nanowires by high voltage a-Si thin film transistor
Author
Chen, X.M. ; Ou, H. ; Song, X.M. ; Chen, W.Q. ; She, J.C. ; Deng, S.Z. ; Xu, N.S. ; Jun Chen
Author_Institution
State Key Lab. of Display Mater. & Technol., Sun Yat-s en Univ., Guangzhou, China
fYear
2015
fDate
13-17 July 2015
Firstpage
220
Lastpage
221
Abstract
Modulation of field emission current from ZnO nanowires (ZnO NWs) by a high voltage amorphous silicon thin film transistor (HVTFT) is reported. The emission current was modulated in about three orders of magnitude. Precise control and stabilization of emission current were achieved.
Keywords
II-VI semiconductors; amorphous semiconductors; field emission; modulation; nanowires; silicon; thin film transistors; wide band gap semiconductors; zinc compounds; HVTFT; Si; ZnO; field emission current; high voltage amorphous silicon thin film transistor; nanowires; II-VI semiconductor materials; Iron; Logic gates; Modulation; Nanowires; Thin film transistors; Zinc oxide; ZnO nanowires; field emission; thin film transistor;
fLanguage
English
Publisher
ieee
Conference_Titel
Vacuum Nanoelectronics Conference (IVNC), 2015 28th International
Conference_Location
Guangzhou
Print_ISBN
978-1-4673-9356-0
Type
conf
DOI
10.1109/IVNC.2015.7225591
Filename
7225591
Link To Document