A 48 GHz monolithically integrated frequency tripler with InP HEMTs

Author

Orzati, A. ; Robin, F. ; Meier, H.P. ; Homan, O.J. ; Bächtold, W.

Author_Institution

Lab. for Electromagn. Fields & Microwave Electron., Swiss Fed. Inst. of Technol., Zurich, Switzerland

fYear

2002

fDate

2002

Firstpage

447

Lastpage

450

Abstract

We present a single-device 16 - 48 GHz frequency tripler realized with a 0.2 μm InP HEMT process using coplanar waveguide technology. The fabricated circuit presents a maximum third harmonic conversion gain of -10.5 dBm, a maximum output power of -9 dBm, a first harmonic suppression of more than 25 dB, and a peak third harmonic conversion efficiency of 5.5%. This characteristics make it a suitable candidate for the generation of a stable high-frequency local oscillator.

Keywords

HEMT integrated circuits; III-V semiconductors; MMIC frequency convertors; coplanar waveguide components; harmonics suppression; indium compounds; 0.2 micron; 16 GHz; 48 GHz; 5.5 percent; HEMTs; InP; coplanar waveguide technology; first harmonic suppression; high-frequency local oscillator; millimeter-wave radio; monolithically integrated frequency tripler; output power; third harmonic conversion gain; Character generation; Coplanar waveguides; Frequency; HEMTs; Harmonics suppression; Indium phosphide; Integrated circuit technology; MODFETs; Power generation; Power system harmonics;

fLanguage

English

Publisher

ieee

Conference_Titel

Indium Phosphide and Related Materials Conference, 2002. IPRM. 14th

ISSN

1092-8669

Print_ISBN

0-7803-7320-0

Type

conf

DOI

10.1109/ICIPRM.2002.1014464

Filename

1014464