InAs self-assembled quantum dot lasers grown on [100] InP

Author

Poole, P.J. ; Allen, C.Ni. ; Marshall, P. ; Fraser, J. ; Moisa, S. ; Raymond, S. ; Fafard, S.

Author_Institution

Inst. for Microstructural Sci., Nat. Res. Council of Canada, Ottawa, Ont., Canada

fYear

2002

fDate

2002

Firstpage

573

Lastpage

576

Abstract

Quantum dot lasers containing five stacked layers of InAs quantum dots (QDs) embedded in quaternary InGaAsP are grown on [100] InP substrates. The QD ensemble has a density of 1.5 × 10¹⁰ cm^-2 and emits light at ∼1.6 μm at 77 K. Lasing wavelength and threshold current density can be shifted by changing the cavity length of the laser diode and the latter reaches a value as low as 49 A/cm² at 77 K for a gate size of 2000 μm × 150 μm. Temperature dependence of the threshold current is observed implying the presence of thermionic emission increasing with temperature.

Keywords

III-V semiconductors; chemical beam epitaxial growth; current density; indium compounds; quantum well lasers; self-assembly; semiconductor growth; semiconductor quantum dots; thermionic emission; 1.6 micron; 150 micron; 2000 micron; 77 K; InAs self-assembled quantum dot lasers; InAs-InGaAsP; InP; LD cavity length; [100] InP substrates; chemical beam epitaxy; laser diode; quaternary InGaAsP; stacked layers; thermionic emission; threshold current density; Chemical lasers; Gallium arsenide; Indium gallium arsenide; Indium phosphide; Quantum dot lasers; Quantum well lasers; Semiconductor lasers; Substrates; Threshold current; US Department of Transportation;

fLanguage

English

Publisher

ieee

Conference_Titel

Indium Phosphide and Related Materials Conference, 2002. IPRM. 14th

ISSN

1092-8669

Print_ISBN

0-7803-7320-0

Type

conf

DOI

10.1109/ICIPRM.2002.1014493

Filename

1014493