• DocumentCode
    1890465
  • Title

    Optimization of MOVPE-grown GaInNAs/GaAs quantum wells for 1.3-μm laser applications

  • Author

    Asplund, C. ; Sundgren, P. ; Hammar, M.

  • Author_Institution
    Dept. of Microelectron. & Inf. Technol., R. Inst. of Technol., Kista, Sweden
  • fYear
    2002
  • fDate
    2002
  • Firstpage
    619
  • Lastpage
    621
  • Abstract
    The effects of high group-V precursor flows during metal-organic vapor phase epitaxial growth of GaInNAs QWs are investigated. It is shown that photoluminescence line width, wafer uniformity, and sensitivity to growth temperature can be improved using V/III ratios in excess of 2000. Broad area GaInNAs/GaAs SQW lasers with dimensions 100 × 820 μm2 grown under these conditions have threshold current densities as low as 660 kA/cm at 1.26 μm emission wavelength.
  • Keywords
    III-V semiconductors; gallium arsenide; indium compounds; photoluminescence; quantum well lasers; vapour phase epitaxial growth; 1.3 micron; GaInNAs-GaAs; GaInNAs/GaAs quantum well; broad area SQW laser; metal-organic vapor phase epitaxial growth; photoluminescence; threshold current density; Epitaxial growth; Gallium arsenide; Indium; Laser applications; Nitrogen; Photoluminescence; Quantum well lasers; Reproducibility of results; Solids; Temperature sensors;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Indium Phosphide and Related Materials Conference, 2002. IPRM. 14th
  • ISSN
    1092-8669
  • Print_ISBN
    0-7803-7320-0
  • Type

    conf

  • DOI
    10.1109/ICIPRM.2002.1014504
  • Filename
    1014504
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1890465