Improved p-doping profiles in lasers and modulators

Author

Haysom, J.E. ; Glew, R. ; Blaauw, C. ; Driad, R. ; Macquistan, D. ; Hampel, C.A. ; Greenspan, J. ; Bryskiewicz, T.

Author_Institution

Nortel Networks Opt. Components, Ottawa, Ont., Canada

fYear

2002

fDate

2002

Firstpage

627

Lastpage

630

Abstract

Zn diffusion during MOCVD growth is studied in a series of different structures using SIMS analysis. A first experiment supports a concentration dependent diffusion rate, and a +1 charge on the Zn interstitial. The Zn diffusion front is found to be quite sharp, and this is used advantageously in combination with an undoped spacer layer in a p-i-n structure. Further experiment explores the effect of p+ InGaAs caps (both C and Zn doped) on the diffusion in underlying p to undoped (p-i) interfaces, and find that there is minimal impact.

Keywords

III-V semiconductors; MOCVD; diffusion; doping profiles; electro-optical modulation; gallium arsenide; indium compounds; interstitials; secondary ion mass spectra; semiconductor lasers; zinc; InGaAsP-InP:Zn; InGaAsP/InP laser; InGaAsP/InP modulator; MOCVD growth; SIMS analyis; Zn diffusion; Zn interstitial; p-doping profile; p-i-n structure; p⁺-InGaAs cap; spacer layer; Doping; Equations; Indium gallium arsenide; Indium phosphide; Intelligent networks; MOCVD; Optical device fabrication; Optical devices; PIN photodiodes; Zinc;

fLanguage

English

Publisher

ieee

Conference_Titel

Indium Phosphide and Related Materials Conference, 2002. IPRM. 14th

ISSN

1092-8669

Print_ISBN

0-7803-7320-0

Type

conf

DOI

10.1109/ICIPRM.2002.1014507

Filename

1014507